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UNISONIC TECHNOLOGIES CO., LTD 2SC4242
SWITCHMODE SERIES NPN POWER TRANSISTORS
DESCRIPTION
The UTC 2SC4242 is a high-voltage, high-speed switching power transistor and designed particularly for 115 and 220V switch mode applications, such as switching regulators, inverters, DC-DC converter and general purpose power amplifiers.
NPN SILICON TRANSISTOR
FEATURES
* Low saturation voltage. * Switching time: tF=0.5 s (Max.)@ IC=5.0A * High reliability
*Pb-free plating product number: 2SC4242L
ORDERING INFORMATION
Ordering Number Normal Lead Free Plating 2SC4242-TA3-T 2SC4242L-TA3-T Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube
2SC4242L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220 (3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw Copyright (c) 2008 Unisonic Technologies Co., Ltd
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2SC4242
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage SYMBOL VCEO VCBO VEBO IC ICM IB
NPN SILICON TRANSISTOR
RATINGS UNIT 400 V 450 V 8.0 V Continuous 7.0 A Collector Current 14 Peak Base Current 2.0 A Total Power Dissipation @TC=25 40 W PD Derate Above 25 0.32 W/C Junction Temperature TJ +150 C Storage Temperature TSTG -40 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Thermal Resistance Junction -Case SYMBOL
JC
RATINGS 4
UNIT C/W
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage BVCEO ICEO=100mA, IB=0 Collector-Base Breakdown Voltage BVCBO ICBO=1.0mA, IE=0 Emitter-Base Breakdown Voltage BVEBO IEBO=1.0mA, IC=0 Collector Cutoff Current ICBO VCBO=450V, IE=0 Emitter Cutoff Current IEBO VEBO=8.0V, IC=0 ON CHARACTERISTICS DC Current Gain hFE IC=4.0A, VCE=5.0V Collector-Emitter Saturation Voltage VCE (SAT) IC=4.0A, IB=800mA Base-Emitter Saturation Voltage VBE (SAT) IC=4.0A, IB=800mA SWITCHING CHARACTERISTICS On Time tON VCC=150V, IC=5.0A Storage Time tS IB1= -IB2=1.0A, RL=30 Fall Time tF Note: Pulse Test: Pulse Width=300s, Duty Cycle 2.0% MIN 400 450 8.0 100 100 10 0.8 1.2 1.0 2.5 0.5 V V s s s TYP MAX UNIT V V V A A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC4242
TYPICAL CHARACTERISTIC
NPN SILICON TRANSISTOR
Power Derating 60 50
0 10
40 30 20 10 0
s
0
25
50
75
100
125
150
Temperature, TC ( )
Collector Emitter Voltage, VCE (V)
Voltage, V (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time, t ( s)
DC Current Gain, hFE
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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